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采用金属有机化学气相沉积系统（MOCVD）外延具有三个不同反射中心波长的 Al As/Al0.5Ga0.5As 复合分布式布拉格反射镜（DBR），利用透射电镜（TEM）、X 射线衍射（XRD）表征结构、厚度和组分，利用白光反射谱表征反射谱强度和带宽。结果表明：该复合 DBR 比常规 DBR 和两个反射中心波长复合 DBR 具有更高的反射谱强度和更宽的带宽。在该复合 DBR 上外延 Al Ga In P 发光二级管（LED），制备成 6.0mil*6.0mil 尺寸芯片，并在 20m A 电流下测得输出光功率为 3.54m W，发光效率为 17.26lm/W，外量子效率为 8.77%，相比常规 DBR 制备 LED 输出光功率高 35.1%，相比两个反射中心波长复合 DBR 制备 LED 输出光功率高 11.3%。说明具有三个反射中心波长的复合 DBR 更大幅度提升 Al Ga In P 发光二极管的出光效率。
The Al As / Al0.5Ga0.5As composite distributed Bragg reflector (DBR) with three different central wavelengths of reflection was epitaxially grown by MOCVD and characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD) Structure, thickness and composition were characterized, and the intensity and bandwidth of the reflection spectrum were characterized by white light reflectance spectroscopy. The results show that the composite DBR has higher reflection spectrum intensity and wider bandwidth than the conventional DBR and two reflection center wavelength composite DBRs. An AlGaInP light-emitting diode (LED) was epitaxially grown on the composite DBR to produce a 6.0 mil * 6.0 mil size chip and output power of 3.54 mW at a current of 20 mA with a luminous efficiency of 17.26 lm / W, the external quantum efficiency is 8.77%, which is 35.1% higher than that of conventional DBR. Compared with two DBR centers, the output power of LED is 11.3% higher. This shows that the composite DBR with three reflection center wavelengths greatly enhances the light extraction efficiency of the Al Ga In P LED.