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因为砷化镓场效应晶体管振荡器比其它类型的固态振荡器的噪声低,效率高而且设计灵活,所以在微波通信中非常适用。目前已有有关 C 频段和 X 频段的砷化镓场效应晶体管振荡器试验成功的报导。这些振荡器的输出功率均低于10O毫瓦,直流——射频变换效率低于20%。本设计采用共源砷化镓场效应晶体管振荡器结构。振荡器是一个 C 频段的集成化振荡器。在振荡器中有一个最佳外反馈网络,共源场效应晶体管片安装在氧化铝陶瓷基片上。振荡器的微带线和作反馈用的电容器串联连接。这种没有采取稳定措施的振荡器,在6千兆赫可产生400毫瓦的功率,效率为38%。这可与同一场效应晶体管片作放大器用时产生的最大输出功率相比拟。
Because gallium arsenide field-effect transistor oscillators are less noisy, more efficient and more flexible than other types of solid-state oscillators, they are ideal for microwave communications. There have been successful reports of successful trials of C-type and X-band GaAs field-effect transistor oscillators. The output power of these oscillators are lower than 10O mW, DC-RF conversion efficiency of less than 20%. The design uses a common source GaAs FET oscillator structure. Oscillator is a C-band integrated oscillator. In the oscillator has an optimal external feedback network, the common-source field effect transistor chip mounted on the alumina ceramic substrate. The microstrip line of the oscillator and the capacitor for feedback are connected in series. This kind of oscillator, which has not taken any stabilizing measures, can generate 400 milliwatts of power at 6 GHz with an efficiency of 38%. This is comparable to the maximum output power produced when the same field effect transistor amplifier is used.