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研究了一种基于深反应离子刻蚀(DRIE)中notching效应的MEMS单步干法制造工艺.首先,基于DRIE刻蚀SOI硅片时notching现象产生的机理,设计了多种不同线宽的槽结构,验证notching效应的发生条件.实验结果表明,对于所采用的具有30μm器件层的SOI硅片,发生notching现象的临界槽宽为12μm,而notching释放的极限结构宽度同样为12μm.其次,为实现大面积结构的notching释放,研究了正方形、矩形、三角形及六边形等4种典型释放孔结构的干法释放效果.实验结果表明,六边形释放孔不但能够快速有效地释放结构,同时还能降低notch-ing效应的磨损,有利于惯性MEMS器件的加工.最后,设计了一种Z轴微机械陀螺结构以验证提出的设计及工艺.加工及测试结果表明,所提出的单步干法制造工艺完全满足微机械陀螺设计加工要求,工艺简单、成品率高,所测试的陀螺在常压下即可达到122的品质因数.
A MEMS single-step dry process based on the notching effect in deep reactive ion etching (DRIE) is studied.Firstly, based on the mechanism of notching caused by DRIE etching of SOI wafers, a series of slots with different widths are designed Structure and verify the conditions of notching effect.The experimental results show that for the SOI wafers with 30μm device layer, the critical slot width of notching phenomenon is 12μm, and the limit structure width of notching is also 12μm.Secondly, The results show that the hexagonal release holes can not only release the structure quickly and effectively, but also can not only release structures efficiently, But also to reduce the notch-ing effect of wear, is conducive to inertial MEMS device processing.At last, a Z-axis micromechanical gyroscope structure is designed to verify the proposed design and process.The processing and test results show that the proposed single-step dry French manufacturing process to fully meet the requirements of micro-machined gyroscope design and processing, process is simple, high yield, the gyroscope tested under atmospheric pressure can reach 122 quality factor.