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对分布布拉格反射镜(DBR)的原理和特征进行了分析,使用传输矩阵方法计算了不同对数GaAs/A lAs反射镜的反射率曲线。利用分子束外延(MBE)设备生长了波长为920nm和980nm的半导体多层膜DBR反射镜,分析了实验测得的反射谱与理论拟合曲线之间的差异及其产生原因,实现了材料的优化生长,获得了反射率大于99%、中心波长和带宽接近理论计算值的DBR材料。该DBR的反射谱拟合与优化生长研究可应用于VCSEL和VECSEL激光器。
The principles and characteristics of distributed Bragg reflector (DBR) are analyzed, and the reflectance curves of different logarithmic GaAs / AlAs reflectors are calculated using the transfer matrix method. The semiconductor multi-layer film DBR mirrors with wavelength of 920nm and 980nm were grown by molecular beam epitaxy (MBE). The differences between the measured reflection spectra and the theoretical fitting curves were analyzed and the influence of the material Optimum growth was obtained DBR material with reflectance greater than 99% and center wavelength and bandwidth close to the theoretical value. The DBR reflectance spectrum fitting and optimized growth studies can be applied to VCSEL and VECSEL lasers.