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为考察溅射功率对Cu-In薄膜中相结构以及相应的CuInSe2(简称CIS)薄膜性能的影响,采用中频交流磁控溅射方法沉积Cu-In薄膜,并采用固态硒化方法形成CIS薄膜。采用SEM和EDX观察和分析了它们的表面形貌和成分,采用XRD表征了薄膜的组织结构,并分析了硒化中的反应动力学过程。结果表明,在不同的溅射功率条件下,Cu-In预制膜以Cu11In9相或Cu11In9和CuIn的混合相存在。由Cu11In9和CuIn混合相薄膜形成的CIS薄膜具有单一的CuInSe2相黄铜矿相结构,且其成分接近CuInSe2化学计量比。而由Cu11In9相Cu-In预制膜形成的CIS薄膜中除了CuInSe2相以外,还出现了Cu2Se相,且其成分远离CuInSe2化学计量比。因此,具有Cu11In9和CuIn混合相结构的Cu-In薄膜更适合制备CIS太阳电池吸收层。
In order to investigate the influence of sputtering power on the phase structure of Cu-In thin films and the corresponding properties of CuInSe2 (CIS) thin films, a Cu-In thin film was deposited by AC magnetron sputtering and a CIS thin film was formed by solid state selenization method. Their surface morphology and composition were observed and analyzed by SEM and EDX. The structure of the films was characterized by XRD and the reaction kinetics in selenization was analyzed. The results show that the Cu-In pre-film exists in the mixed phase of Cu11In9 phase or Cu11In9and CuIn under different sputtering powers. The CIS thin film formed by the Cu11In9 and CuIn mixed phase films has a single CuInSe2 chalcopyrite phase and its composition is close to the CuInSe2 stoichiometry. In the CIS film formed of a Cu11In9-phase Cu-In pre-film, in addition to the CuInSe2 phase, a Cu2Se phase appears and its composition is far away from the CuInSe2 stoichiometry. Therefore, a Cu-In thin film with a mixed phase structure of Cu11In9 and CuIn is more suitable for preparing a CIS solar cell absorber layer.