研制了一种功率型4H-SiC双极结型晶体管。通过采用深能级降低工艺和一氧化氮退火钝化工艺,提高了电流增益。详细研究了发射极-基极几何结构与电流增益的关系,发现随着发射极线宽或发射极-基极间距的逐渐增加,最大电流增益也逐渐提高并趋于饱和。器件在反向阻断电压1 200V时漏电流为5.7μA。在基极电流为160mA时集电极电流达11A,电流增益达到68。 A power 4H-SiC bipolar junction transistor has been developed. Through the use of deep-level reduction process and nitric oxide annealing passivation process, increased current gain. The relationship between the emitter-base geometry and the current gain is studied in detail. It is found that the maximum current gain gradually increases and becomes saturated as the emitter width or the emitter-base spacing increases. The device has a leakage current of 5.7μA at a reverse blocking voltage of 1 200V. When the base current is 160mA, the collector current reaches 11A and the current gain reaches 68.