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目前ＧａＡｓ基低噪声ＨＥＭＴ，包括用于ＤＢＳ的ＩｎＧａＡｓ／Ｎ－ＡｌＧａＡｓＰＨＥＭＴ已经商品化，且ＧａＡｓ基功率ＨＢＴ也将很快进入市场。尽管ＩｎＰ基ＨＥＭＴ或ＨＢＴ仍处于研究与发展阶段，但由于它们特殊的电性能，它们将有希望成为下一代异质结构器件。在继续改进器件结构和工艺过程中，晶格生长工艺的改进激发了一种新的趋势，提出并实现了一种用ＩｎＰ做有源层的新型器件结构。这篇文章主要描述了这样一种ＩｎＰ基ＨＥＭＴ和ＨＢＴ器件结构的最新进展。
Currently, GaAs-based low-noise HEMTs, including InGaAs / N-AlGaAsPHEMTs for DBS, have been commercialized and GaAs based power HBTs will soon be available. Although InP-based HEMTs or HBTs are still in the research and development stage, they will hopefully become the next generation of heterostructured devices because of their special electrical properties. In the continuous improvement of device structure and process, the improvement of the lattice growth process has stimulated a new trend, and proposed and implemented a new type of device structure using InP as the active layer. This article describes the latest developments in the structure of such an InP-based HEMT and HBT devices.