An Er2O3coating-type selective emitter for themophotovoltaic application was prepared by plasma spray technology.The test results show that plasma spray technology could be used to prepare the Er2O3coating-type selective emitter with good stability at 1400°C.Based on the measurements of the high temperature normal spectral emissivity and the spectral hemispherical emissivity of the samples at room temperature,the influence of the coating thickness was discussed,and the selective emission performance of the sample was evaluated using radiative efficiency as the criterion.The results demonstrate that the emission of substrate could not be neglected unless the coating thickness would be larger than the penetration depth,which is around100μm.The selective emission peak of the Er2O3coating occurs at 1550 nm,matching well with the GaSb cells.However,the radiative efficiency is not larger than that of the SiC emitter,because the non-convertible emission of 1.725–5 m accounts for a large proportion of the total radiation power,especially at high temperature.Effective suppression of this band emission is essential to the improvement of the radiation efficiency of the emitter. An Er2O3coating-type selective emitter for themophotovoltaic application was prepared by plasma spray technology. The test results show that plasma spray technology could be used to prepare the Er2O3coating-type selective emitter with good stability at 1400 ° C. Based on the measurements of the high temperature normal spectral emissivity and the spectral hemispherical emissivity of the samples at room temperature, the influence of the coating thickness was discussed, and the selective emission performance of the sample was evaluated using radiative efficiency as the criterion. result demonstrated that the emission of substrate could not be neglected unless the coating thickness would be larger than the penetration depth, which is around 100 μm. The selective emission peak of the Er2O3 coating occurs at 1550 nm, matching well with the GaSb cells. However, the radiative efficiency is not larger than that of the SiC emitter, because of non-convertible emission of 1.725-5 m accounts for a large p roportion of the total radiation power, especially at high temperature. Effective suppression of this band emission is essential to the improvement of the radiation efficiency of the emitter.