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硅量子点(Si QDs)的尺寸一般小于10nm,由于量子限域效应和表面效应而表现出与体硅材料不同的电子和光学性质,因此硅量子点受到了研究者的关注。近年来,硅量子点因其新颖的光电性能已经被应用到光电器件领域,并取得了一系列的研究进展。概述了硅量子点的电子和光学性质,详细介绍了国内外有关硅量子点在发光器件、太阳电池和光探测器3个方面的研究进展,并针对不同类型的硅量子点光电器件的性能进行了分析,认为经过坚持不懈的研究,硅量子点能够在未来光电器件革新中扮演重要角色。
Silicon quantum dots (Si QDs) are generally smaller than 10 nm in size and exhibit different electronic and optical properties than bulk silicon materials due to quantum confinement effects and surface effects, and therefore, silicon quantum dots have attracted the attention of researchers. In recent years, silicon quantum dots have been applied to optoelectronic devices due to their novel optoelectronic properties, and a series of research progresses have been made. The electronic and optical properties of silicon quantum dots are summarized. The research progress of silicon quantum dots in three aspects of light-emitting devices, solar cells and photodetectors are introduced in detail. The performance of different types of silicon quantum dot optoelectronic devices Analysis, that after continuous research, silicon quantum dots can play an important role in the future of photovoltaic device innovation.