设计了一种新型宽势阱光电探测器件。介绍了该器件的结构形式、电流传输机制以及隧道效应和偏压对器件光探测灵敏度的影响。当器件光敏面积为 4 mm2 时 ,在光源测试条件为 :2 856 ,1 90 0 0 lx下 ,光电流达 0 .6 m A,加 1 .5 V反偏时达 2 4 m A,灵敏度分别为 2 .9A/ W及1 1 9A/ W。 A new type of wide-band photodetector is designed. The structure of the device, the current transmission mechanism and the effect of tunneling and bias on the photodetection sensitivity of the device are introduced. When the photosensitive area of ​​the device is 4 mm2, under the light source test conditions of 2 856 and 1 90 0 0 lx, the photocurrent reaches 0 .6 m A and the sensitivity increases by 1 5 V reverse bias 2 .9 A / W and 1 1 9A / W.