北京科技大学材料学院的研究人员在活性金属钎焊(AM B)陶瓷覆铜基板工程化制造领域取得突破,在国内率先成功研制出了大面积(4.5″×4.5″)氮化铝覆铜基板。据悉,陶瓷覆铜基板是高压大功率IGBT(绝缘栅双极型晶体管)模块的重要组成部件,既具有陶瓷的高导热、高电绝缘、高机械强度、低膨胀等特性,又具有无氧铜的高导电性和优异焊接性能,还 Researchers at Beijing University of Science and Technology Materials Institute made breakthroughs in the field of engineered manufacturing of active metal brazing (AMB) ceramic-coated copper substrates. In China, they successfully pioneered the development of a large area (4.5 “× 4.5”) aluminum nitride copper-clad substrate . It is reported that the ceramic copper clad substrate is a high-voltage high-power IGBT (Insulated Gate Bipolar Transistor) module an important component, both with high thermal conductivity of ceramics, high electrical insulation, high mechanical strength, low expansion and other characteristics, but also with oxygen-free copper The high electrical conductivity and excellent welding performance, also