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我们获得了波长1.1～1.6μm的GaInAsP/InP激光器的阈值电流与温度之间的关系。该关系与处于极低温下的GaAlAs/GaAs激光器的情况相似。根据I=I_0exp(T/T_0)式得出的特征温度T_0约140K。过去的一些结果指出,当温度为200K时,在阈值电流—温度关系曲线上出现使T_0降低到55与75K之间的截止点。这种现象的出现,主要是由于俄歇复合引起的,同时还有其它因素所致。深入研究第一截止温度T_(b1)是极其重要的。然而从现有的一些结果可以看出,这种现象
We obtained the relationship between the threshold current and the temperature of a GaInAsP / InP laser with a wavelength of 1.1-1.6 μm. This relationship is similar to the case of GaAlAs / GaAs lasers at very low temperatures. According to I = I_0exp (T / T_0) derived characteristic temperature T_0 about 140K. Some of the past results indicate that at a temperature of 200K, a cut-off point occurs that reduces T_0 to between 55 and 75K at the threshold current-temperature relationship. The appearance of this phenomenon is mainly caused by Auger recombination, and other factors as well. In-depth study of the first cut-off temperature T_ (b1) is extremely important. However, we can see from some existing results that this phenomenon