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成功将氧化铟掺杂到氧化镓上制备了In_2O_3/Ga_2O_3催化剂,并利用X射线衍射(XRD)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)、紫外漫反射光谱(UV-Vis DRS)、光致发光光谱(PL)和电感耦合等离子体发射光谱(ICP-AES)等表征手段对In_2O_3/Ga_2O_3进行了分析.同时,进一步考察了In_2O_3/Ga_2O_3的光催化固氮性能.结果表明,In_2O_3的引入提高了Ga_2O_3的光吸收性能和氧空位的比例,并且有利于其表面光生电子和空穴的分离.当In_2O_3/Ga_2O_3材料用于光催化固氮时,其最佳In_2O_3掺杂量为2.29%,最佳材料焙烧温度为500℃.最后,研究了空穴捕获剂种类的影响,发现在叔丁醇的体系中,In_2O_3/Ga_2O_3的光催化固氮效率最高.此外,氮源对固氮效果也存在较大影响.以空气作为氮源的光催化固氮过程因存在间接固氮过程,相对于以高纯氮气作为氮源的光催化固氮效率更高.
The In 2 O 3 / Ga 2 O 3 catalysts were successfully prepared by doping indium oxide into gallium oxide and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible diffuse reflectance spectroscopy The properties of In 2 O 3 / Ga 2 O 3 were also investigated by DRS, PL and ICP-AES, and the photocatalytic nitrogen fixation of In 2 O 3 / Ga 2 O 3 was also investigated. The introduction of In 2 O 3 improves the ratio of light absorption and oxygen vacancies of Ga 2 O 3 and favors the separation of photogenerated electrons and holes on the surface. When In 2 O 3 / Ga 2 O 3 is used for photocatalytic nitrogen fixation, the optimum In 2 O 3 doping amount is 2.29 %, And the best material calcination temperature is 500 ℃ .Finally, the effects of hole-trapping agents were studied and found that the photocatalytic nitrogen fixation efficiency of In 2 O 3 / Ga 2 O 3 was the highest in the tert-butanol system.In addition, Has a greater impact on the air as a nitrogen source of photocatalytic nitrogen fixation due to the existence of indirect nitrogen fixation process, compared to high purity nitrogen as a nitrogen source photocatalytic nitrogen fixation efficiency is higher.