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用控制容积法对布里兹曼法碲镉汞（Ｈｇ１－ｘＣｄｘＴｅ）晶体生长过程热场分布进行了计算．介绍了控制容积公式的推导和边界条件的处理，并对所得结果进行了分析．虽然碲镉汞晶体生长时热场受系统的影响情况错综复杂，但从本文的研究结果中仍可看出一些明显的规律，可供从事该方面研究工作时参考．
The control volume method was used to calculate the thermal field distribution of the Brigzmann-Hg1-xCdxTe crystal. The derivation of control volume formula and the treatment of boundary conditions are introduced, and the results obtained are analyzed. Although the influence of the system on the thermal field during the growth of HgCdTe crystals is complicated, some obvious laws can still be seen from the research results in this paper, which are available for reference in the research work in this field.