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在双异质结发光二极管(DH-LED)实际材料生长过程中,它的限制层的Al组分的确定有较大的随意性.在不同的P型掺杂程度下,通过分析载流子在双异质结中的输运及受约束情况,从理论上剖析了限制层Al组分分别对应确定为一个最合适的取值,此时有源层中的载流子应有一个最大数量的复合,LED的复合效率最高.从而可以探索P型掺杂对限制层Al组分确定的影响的规律,并得到一个较合适的掺杂浓度.这对于器件结构设计以及相关的金属有机化合物气相沉积(MOCVD)材料生长有一定的指导意义.
During the actual growth of DH-LED, the Al composition of the confinement layer is determined to be more arbitrary.Under the different P-type doping levels, In the double heterojunction transport and constrained situation, it is theoretically analyzed that the Al layer in the confinement layer should be correspondingly determined as the most appropriate value. At this time, the carrier in the active layer should have a maximum number Of the composite, the highest LED compound efficiency.Thus you can explore the P-type doped limiting layer Al composition determination of the law, and get a more appropriate doping concentration.This for the device structure design and related metal organic compounds vapor phase Deposition (MOCVD) material growth has some guiding significance.