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利用射频磁控溅射技术在石英玻璃上制备了ZnO:Al薄膜,继而N离子注入实现薄膜的Al-N共掺杂,随后进行了不同温度和时间的热处理。并借助X射线衍射(XRD)、霍耳测试(Hall)、X射线光电能谱仪(XPS)等手段对ZnO薄膜的性能进行了表征。实验结果表明,Al-N共掺杂ZnO薄膜在578℃退火8 min表现出较稳定的p型导电,其载流子数高达1×1018～6×1018个·cm-3,对应的电阻率为1～9Ω·cm,迁移率为1～2 cm2·V-1·s-1。与单掺N相比,实现p型导电所需的退火温度有明显降低,这很可能与Al的掺入有关。此外,XPS测试结果证实大量的Ni取代O空位是薄膜p型导电的根本原因。
ZnO: Al thin films were prepared on quartz glass by radio frequency magnetron sputtering, followed by N-ion implantation to achieve Al-N co-doping of the films, followed by heat treatment at different temperatures and times. The properties of ZnO thin films were characterized by means of X-ray diffraction (XRD), Hall test and X-ray photoelectron spectroscopy (XPS). The experimental results show that the Al-N co-doped ZnO thin films annealed at 578 ℃ for 8 min showed a relatively stable p-type conductivity with a carrier number as high as 1 × 10 18 -6 × 10 18 cm -3. The corresponding resistivity 1 to 9 Ω · cm and a mobility of 1 to 2 cm2 · V-1 · s-1. Compared with the single doped N, the annealing temperature needed to achieve p-type conductivity is significantly reduced, which is probably related to the incorporation of Al. In addition, XPS test results confirm that a large amount of Ni replaces O vacancy is the fundamental reason for the p-type conductivity of the film.