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用射频/直流磁控溅射制备了Ta/NiOx/Ni81Fe19/Ta磁性薄膜,并利用 X射线光电子能谱仪（XPS）和振动样品磁强计（VSM）研究了NiOx不同化学状态对Ni81Fe19交换耦合场Hex及该磁性薄膜的矫顽力Hc的影响以及NiO/Ni81Fe19界面反应.结果表明:反应溅射中的Ar/O2比对NiOx中镍的化学状态有很大的影响,当溅射气压为0.57 Pa,Ar/O2为7:1时,制备的NiOx中的x≌1,镍为+2价,相应的Hex最大.Ar/O2比偏离7:1时,NiOx层中出现单质镍和+3价的镍,相应的Hex也下降,单质镍的出现还会增大该磁性薄膜的矫顽力Hc.XPS的分析还表明,在 NiO/NiFe界面发生了反应:NiO+Fe=Ni+FeO和3NiO+2Fe=3Ni+Fe2O3给出了界面上存在磁性杂质的证据,这些磁性杂质会影响NiO/NiFe的Hex和Hc.
The Ta / NiOx / Ni81Fe19 / Ta magnetic thin films were prepared by RF / DC magnetron sputtering. X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM) were used to study the effect of different chemical states of NiOx on Ni81Fe19 exchange coupling Field Hex and the coercivity Hc of the magnetic film and the NiO / Ni81Fe19 interfacial reaction.The results show that the Ar / O2 ratio in the reactive sputtering has a great influence on the chemical state of nickel in the NiOx. When the sputtering pressure is 0.57 Pa and Ar / O2 ratio of 7: 1, the Ni xx in the prepared NiOx x1 1, nickel +2 valence, the corresponding Hex maximum.Ar / O2 ratio deviation 7: 1, the NiOx layer of elemental nickel and + Trivalent nickel, the corresponding Hex also decreased, the presence of elemental nickel will increase the coercivity of the magnetic film Hc.XPS analysis also showed that NiO / NiFe interface reaction: NiO + Fe = Ni + FeO And 3NiO + 2Fe = 3Ni + Fe2O3 give evidence of the presence of magnetic impurities at the interface that affect the Hex and Hc of NiO / NiFe.