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对双极型晶体管ΔVBE瞬态热阻测试法中晶体管壳温波动和测量延迟时间的误差进行了分析,提出了提高测试精度的误差修正方法.以3DK457(F0金属封装)双极晶体管为实验对象进行了研究,结果表明:晶体管瞬态热阻ΔVBE修正测试方法与红外扫描热像法和标准电学法相比较在保持较高测量精度的前提下,测试成本低,测量效率高.
The error of shell temperature fluctuation and measurement delay time in transient thermal resistance test of the bipolar transistor ΔVBE was analyzed, and the error correction method to improve the test accuracy was put forward.Taking 3DK457 (F0 metal package) bipolar transistor as the experimental object The results show that the test method of ΔVBE for transient thermal resistance of transistors is low in cost and high in measurement efficiency compared with infrared scanning thermography and standard electrical method, while maintaining high measurement accuracy.