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对nc Si SiO2 薄膜中纳米硅 (nc Si)、Er3+ 和非辐射复合缺陷三者间的关系作了研究 .在 5 14 .5nm光激发下 ,nc Si SiO2 薄膜在 75 0nm和 1.5 4 μm处存在较强的发光 ,前者与薄膜中的nc Si有关 ,后者对应于Er3+ 从第一激发态4 I1 3 2 到基态4 I1 5 2 的辐射跃迁 .随薄膜中Er3+ 含量的提高 ,1.5 4 μm处的发光强度明显增强 ,75 0nm处的发光强度却降低 .H处理可以明显增强薄膜的发光强度 ,但是对不同退火温度样品 ,处理效果却有所不同 .根据以上实验结果 ,可得如下结论 :在nc Si颗粒附近的Er3+ 和其他的缺陷组成了nc Si颗粒内产生的束缚激子的非辐射复合中心 ,束缚激子通过Er3+ 的非辐射复合 ,激发Er3+ 产生 1.5 4 μm处的发光 ,同时降低了 75 0nm处的发光强度 .nc Si颗粒附近其他非辐射复合中心的存在会降低Er3+ 被激发的概率 ,引起 1.5 4 μm处的发光强度降低 .
The relationship between nc Si, Er3 + and non-radiative recombination defects in nc Si SiO2 thin films has been studied. Under the excitation of 5 14 .5 nm, the nc Si SiO2 And 1.5 4 μm, the former is related to the nc Si in the film and the latter corresponds to the transition of Er 3 + from the first excited state 4 I 1 3 2 to the ground state 4 I 1 5 2. , The luminescence intensity at 1.5 4 μm is obviously enhanced and the luminescence intensity at 75 0 nm is decreased.H treatment can significantly enhance the luminescence intensity of the film but the treatment effect is different for different annealing temperature samples.Based on the above experimental results, It can be concluded that Er3 + and other defects in the vicinity of nc Si particles make up the nonradiative recombination centers of bound excitons generated in nc Si particles. The bound excitons are stimulated by Er3 + at a non-radiative recombination of Er3 + at 1.54 μm While the luminescence intensity at 75 0 nm is reduced.The existence of other non-radiative recombination centers near the nc Si particles will reduce the probability of Er3 + being excited and cause the decrease of luminescence intensity at 1.5 4 μm.