众所周知,硅单晶中的少子寿命是评价硅单晶质量的重要参数之一,因而找出影响少子寿命的主要因素,从而提高少子寿命是一个具有重要意义、又很热门的课题。最近日本电报和电话大众公司发表了一篇科研报告,介绍少子寿命是与硅单晶中的氧沉淀密切有关,并深入地定量讨论了它们之间的关系。在直拉硅单晶中,由于氧浓度较高,所以硅单晶在生长后的冷却过程中或以后的热 It is well-known that the low lifetime of silicon in silicon single crystal is one of the important parameters to evaluate the quality of silicon single crystal. Therefore, it is of great importance and hot topic to find out the main factors that affect the life of a minority of sons and improve the life of less children. Recently, Nippon Telegraph and Telephone Volkswagen Corporation published a research report on the lifetime of young children that is closely related to the oxygen precipitation in silicon single crystals and their quantitative relationship in-depth. In Czochralski silicon single crystals, since the oxygen concentration is high, the heat of the silicon single crystal during or after the cooling after growth