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本文通过引入“等效光触发电流”的概念,建立了LTT内部的光电转换模型,从而直接用电触发晶管理论来研究新型LTT器件的初始开通过程。由建立的模型推出了LTT内部产生的有效光触发电流公式及LTT开通条件。计算结果指出:光照在有薄N_2层的LTT光敏面上时门极触发灵敏度较高,N_2层厚度应近似等于N_2层少子扩散长度即约为7～9μm。
In this paper, by introducing the concept of “equivalent photo-induced current”, the photoelectric conversion model in LTT is established, which directly studies the initial turn-on process of the new LTT device by using the electric triggering transistor theory. The established model is used to derive the effective triggering current formula and the LTT turn-on condition in the LTT. The calculation results indicate that the gate has high sensitivity when the illumination is on the LTT photosensitive layer with thin N_2 layer, and the thickness of N_2 layer should be approximately equal to the diffusion length of the minority boron N_2 layer about 7 ~ 9μm.