A very compact (80 - 100 μm2) integrated power splitting devices with two outputs (1 × 2), four outputs (1 × 4) and six outputs (1 × 6) channel
In the present work, we investigate threshold characteristics of a single mode 1.55 μm InGaAsP vertical cavity surface emitting laser (VCSEL) with two differen
The photoluminescence properties of Eu2+-activated α’-Sr2SiO4 and α’-Ba2SiO4 with a high Eu2+ concentration were investigated. In the case of Sr2-xEuxSiO4,
We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode la
Experiments and simulations demonstrate that an SOA-based ring cavity can operate as a tunable laser, wavelength- swept laser or Fourier-domain-mode-locking las