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本文简要地介绍了硅的高压氧化概况。着重叙述我们目前采用的一种高压水汽氧化方法及其一些实验结果。实验表明本方法对于制备厚膜二氧化硅(>2微米)是简易可行的。同时,介绍了一些用氮化硅掩蔽进行硅的局部氧化试验情况。
This article briefly introduces the high-pressure oxidation of silicon. We will focus on a high-pressure water vapor oxidation method that we currently use and some experimental results. Experiments show that the method is simple and feasible for the preparation of thick film silicon dioxide (> 2 microns). At the same time, some silicon oxide masking is introduced for the partial oxidation of silicon.