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报道了用直流反应溅射法制备的氧化锌薄膜的近紫外发射以及热处理条件对受激发射谱的影响。同时用化学反应辅助掺杂方法生长了 p型和 n型 Zn O薄膜 ,研究了 Zn O/ Si异质结和氧化锌同质 p-n结的电压 -电流特性 (I-V特性 )
The influence of near-ultraviolet (UV) emission and heat treatment conditions on the stimulated emission spectra of ZnO thin films prepared by DC reactive sputtering was reported. At the same time, p-type and n-type Zn O films were grown by chemical reaction-assisted doping. The voltage-current characteristics (I-V characteristics) of the Zn O / Si heterojunction and zinc oxide homogeneous p-