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首先采用化学气相沉积法合成出四针状ZnO纳米结构,并通过X射线衍射、扫描电镜、透射电镜等测试手段对其进行了表征和研究.进而采用一种简易的方法制备了ITO/ZnO/ITO结构的紫外探测原型器件,测试了器件的电学特性和紫外响应特性,并讨论了相应的物理机制.研究结果表明:基于四针状纳米ZnO的器件对紫外光(365nm)具有非常灵敏的响应特性,响应度约为0.8A/W,在1V的偏压下器件稳定的光电流与暗电流比高达104～105,光响应度峰值在372nm波长附近.
Firstly, four-needle ZnO nanostructures were synthesized by chemical vapor deposition and characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy, and then a simple method was used to prepare ITO / ZnO / ITO structure of the UV detection prototype device, the device was tested for electrical properties and UV response characteristics, and discusses the corresponding physical mechanism.The results show that: based on the four needle ZnO nano-devices on the UV (365nm) has a very sensitive response The characteristic and the responsivity are about 0.8A / W. Under the bias voltage of 1V, the ratio of photocurrent to dark current of the device is as high as 104-105 and the peak value of photoresponse is near 372nm.