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借助双极传输理论导出了高速绝缘栅双极晶体管（ＩＧＢＴ）传输特性的物理模型。稳态时，其工作原理与普通ＩＧＢＴ完全相同，但瞬态时，由于Ｎ＋阳极对基区非平衡载流子的抽出作用，使其关断速度比普通ＩＧＢＴ大大提高。文中利用二维器件数值分析软件（ＰＩＳＣＥＳ－ＩＢ）对其稳态和瞬态工作特性进行了详细的模拟分析，获得了其工作时的浓度分布、电流分布等内部物理参数，并得到了它的关断时间Ｔｏｆ，其模拟结果与实验值比较吻合
The bipolar transmission theory is used to derive the physical model of high speed IGBT (Insulated Gate Bipolar Transistor). Steady state, its working principle and ordinary IGBT exactly the same, but the transient, due to N + anode on the basis of the extraction of non-equilibrium carrier effect, make it shut off faster than normal IGBT greatly increased. In this paper, the steady-state and transient operating characteristics of PISCES-IB are simulated and analyzed in detail. The internal physical parameters such as concentration distribution and current distribution during operation are obtained. Off time Tof, the simulation results and experimental values match