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提出了一种利用高能离子注入形成的700V三层RESURF结构nLDMOS。与双RESURF结构漂移区表面注入形成P-top层不同,三层RESURF结构在漂移区内部形成P型埋层,漂移区表面保留一条N型导电通路,导通电阻有所降低。利用Sentaurus TCAD仿真软件,分析各参数对器件击穿电压和导通电阻的影响。与普通单RESURF和双RESURF结构相比,三层RESURF LDMOS器件的优值(FOM)得到提高,三种结构的优值之比为1∶1.75∶2.03。
A 700V three-layer RESURF structure nLDMOS with high energy ion implantation is proposed. Unlike the double-RESURF structure, the P-top layer is formed on the drift region. The three-layer RESURF structure forms a P-type buried layer in the drift region. An N-type conductive path remains on the drift region, reducing the on-resistance. Sentaurus TCAD simulation software was used to analyze the influence of each parameter on the device breakdown voltage and on-resistance. The superiority (FOM) of the three-layer RESURF LDMOS device is improved over the conventional single-RESURF and dual-RESURF structures, with the ratio of the three structures being 1: 1.75: 2.03.