南京电子器件研究所近期研制成功的氮化镓(GaN)阴极紫外光电倍增管,采用MOCVD方式外延生长的蓝宝石/AlN/P-AlGaN异质外延结构作为阴极衬底材料,通过真空转移设备的高铝P型GaN材料微结构设计和工艺流通、透射式异质阴极材料生长、GaN外延片洁净处 Nanjing Institute of Electronic Devices recent successful development of gallium nitride (GaN) cathode UV photomultiplier tube, the use of MOCVD epitaxial growth of sapphire / AlN / P-AlGaN heteroepitaxial structure as the cathode substrate material by vacuum transfer device high Aluminum P-type GaN material microstructure design and process flow, transmission heterogeneous cathode material growth, GaN epitaxial wafer clean