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Al 栅功率 GaAs FET 的两种主要的失效模式是非夹断现象和烧毁。非央断现象是由栅金属断开引起的。本文报导了利用微探针俄歇电子能谱和扫描电子显微镜研究栅金属断开原因的研究结果。发现了 Ti/Al 栅金属化对防止栅金属断开是很有效的。此外,为了得到良好的肖特基接触特性和为了证实产品的质量,引用了一种新的不使用光致抗蚀剂的剥离栅形成工艺。为了消除烧毁,深度大于0.2μm 的一种深凹槽栅结构对改进漏击穿电压是很有效的。考虑到上述结果,发展了一种具有深凹槽结构的 Ti/Al 栅的 X 波段功率 GaAs FET。本文指出,改进后的 X 波段功率 GaAs FET 实现了在130℃T_(ch)下 MTF(平均失放时间)≧1×10~7小时,这是报导的器件工作沟道温度的最大位。
Al Gate Power GaAs FET’s two main failure modes are non-pinch-off and burnout. Non-central phenomenon is caused by the disconnection of the gate metal. This paper reports the results of studies on the causes of gate metal disconnection using micro-probe Auger electron spectroscopy and scanning electron microscopy. Ti / Al gate metallization was found to be very effective in preventing gate metal disconnection. In addition, in order to obtain good Schottky contact characteristics and to confirm the quality of the product, a new photoresist-free lift-off gate formation process was used. In order to eliminate burnout, a deep trench gate structure deeper than 0.2μm is effective in improving the leakage breakdown voltage. In view of the above results, an X-band power GaAs FET with a Ti / Al gate with a deep groove structure has been developed. This paper points out that the improved X-band power GaAs FET achieves ≧ 1 × 10 ~ 7 hours MTF (average drop time) at 130 ° C T ch, which is reported as the largest bit of the working channel temperature for the device.