本文指出,在大电流密度下,晶体管h_(FE)可能表现出反常的温度特性,即dh_(FE)/dT<0.认为此种现象的机理是因为基区扩展效应受温度影响.建立了发射极电流分布的数学表达式.用此表达式进行的计算和实际测试说明,h_(FE)负温度系数的出现确实与基区扩展效应相关.所得结果有益于晶体管的设计、制造和使用. This paper points out that at high current densities, transistor h FE may exhibit anomalous temperature characteristics, ie, dh FE / dT <0. The mechanism of this phenomenon is believed to be that the base extension effect is affected by temperature. Emitter current distribution of the mathematical expression.This calculation and the actual test shows that the appearance of h_ (FE) negative temperature coefficient is indeed related to the extension of the base area effect.The results obtained benefit the design, manufacture and use of the transistor.