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用GaAs做双极晶体管时,它的某些材料参数优于硅和锗,另一个优点是可利用GaAlAs/GaAs异质结晶体管的宽禁带发射极原理。目前已制出这样的双极晶体管并进行了测试。最大振荡频率f_(MAG)=2.2GHz,截止频率f_T=2.7GHz,这表明了管子的高频适用能力。而发射极-集电极击穿电压V_(CBO)≥～100V;最大集电极电流I_(Cmax)～300mA,为大功率应用的标志,晶体管的工作温度范围为—269℃～+350℃。双异质结NpN晶体管消除了共发射极结构的Npn宽禁带发射极Ga_(0.7)Al_(0.3)As/GaAs晶体管0.2V的导通电压。此种NpN晶体管能双向工作并有类似的电流增益,这是由宽禁带发射极原理和发射极-基极、集电极-基极异质结的对称性所致。与Npn GaAs晶体管比较,NpN GaAs晶体管的存贮时间t_s约等于Npn晶体管的一半。
Some of the material parameters of bipolar transistors are better than that of silicon and germanium when GaAs is used. Another advantage is that the GaAlAs / GaAs heterostructure transistor can be used with a wide bandgap emitter principle. This bipolar transistor has been made and tested. The maximum oscillation frequency f_ (MAG) = 2.2GHz, the cutoff frequency f_T = 2.7GHz, which shows the high frequency tube capacity. The emitter-collector breakdown voltage V CBO is ~ 100V. The maximum collector current I Cmax ~ 300mA is a sign of high power application. The operating temperature range of the transistor is -269 ℃ ~ + 350 ℃. The double heterojunction NpN transistor eliminates the 0.2V turn-on voltage of a common emitter structure Npn wide bandgap emitter Ga 0.7 Al 0.3 As / GaAs transistor. Such NpN transistors operate bidirectionally with similar current gain due to the wide band gap emitter principle and the symmetry of the emitter-base and collector-base heterojunction. Compared with the Npn GaAs transistor, the storage time t_s of the NpN GaAs transistor is approximately equal to one half of the Npn transistor.