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对 MOS器件在低剂量率 γ射线辐射条件下的偏置效应进行了研究。对不同偏置及退火条件下 MOS器件辐照后的阈值电压漂移进行了对比。结果表明 ,偏置在 MOS器件栅氧化层内产生电场 ,增强了辐照产生电子 -空穴对的分离 ,同时 ,影响了正电荷 (包括空穴和氢离子 )的运动状态 ;此外 ,偏置对退火同样有促进作用。
The biasing effect of MOS device under γ-ray irradiation with low dose rate was studied. The threshold voltage shift of MOS devices under different bias and annealing conditions was compared. The results show that the bias generates an electric field in the gate oxide layer of the MOS device, which enhances the separation of the electron-hole pairs generated by the irradiation and at the same time, influences the movement of positive charges (including holes and hydrogen ions). In addition, Annealing also has a catalytic effect.