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采用复合靶磁控共溅射方法在p型(100)单晶硅衬底上制备了不同Ti含量的W-Ti薄膜,并与纯W和纯Ti薄膜作对比。采用XRD、SEM、AFM、显微硬度计和四探针电阻仪对薄膜的结构、成分及性能进行分析表征。结果表明,W-Ti薄膜呈细晶粒多晶结构,Ti含量较低时,W-Ti薄膜呈体心立方相结构,存在W基W(Ti)固溶体。Ti含量较高时,还出现hcp富Ti相。W-Ti薄膜的显微硬度随Ti含量的增加先增后减,而电阻率则随Ti含量的增加而增大。W-Ti薄膜显微硬度均高于纯Ti薄膜,电阻率则高于纯W而低于纯Ti薄膜。
W-Ti films with different Ti contents were prepared on p-type (100) monocrystalline Si substrates by the composite target magnetron sputtering method and compared with pure W and pure Ti films. The structure, composition and properties of the films were characterized by XRD, SEM, AFM, microhardness tester and four-probe resistance meter. The results show that the W-Ti film has a fine grain polycrystalline structure. When the Ti content is low, the W-Ti film has a body-centered cubic structure with a W-based W (Ti) solid solution. Ti content is higher, but also hcp rich Ti phase. The microhardness of W-Ti film increases first and then decreases with the increase of Ti content, while the resistivity increases with the increase of Ti content. The microhardness of W-Ti film is higher than pure Ti film, the resistivity is higher than the pure W and lower than the pure Ti film.