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为了研究激光对CMOS图像传感器的干扰效果,利用632.8 nm连续激光开展了对CMOS相机的饱和干扰实验。随着入射激光功率的增加,分别观察到未饱和、饱和、全屏饱和等现象,并发现,在全屏饱和前,功率密度达到1.4 W/cm~2后,光斑强区中心区域出现了像素翻转效应。进一步加大光敏面激光功率密度到95.1 W/cm2,激光作用停止后相机仍能正常成像,证明像素翻转效应并非源自硬损伤。基于CMOS相机芯片的结构和数据采集处理过程进行了机理分析,认为强光辐照产生的过量光生载流子使得光电二极管电容上原来充满的电荷被快速释放,使得相关双采样中的两次采样所得信号V_(reset)与V_(signal)逐渐接近,是输出像素翻转的一种可能原因。
In order to study the interference effect of laser on CMOS image sensor, saturation experiment on CMOS camera was carried out by 632.8 nm continuous laser. With the increase of the incident laser power, the phenomena of unsaturated, saturated and full-screen saturation were observed respectively. It was found that the pixel inversion effect occurred in the central region of strong light intensity after the power density reached 1.4 W / cm ~ 2 before full screen saturation . Further increase the light-sensitive surface laser power density to 95.1 W / cm2, the camera can still normal imaging after the laser stop, prove that the pixel flip effect is not caused by hard damage. Based on the CMOS camera chip structure and data acquisition and processing process of a mechanism analysis, that excessive light generated by strong light irradiation of the carrier makes the photodiode capacitance of the original full charge is quickly released, so that the relevant double sampling in the two samples The resulting signal V_ (reset) and V_ (signal) gradually close, is a possible reason for the output pixel flip.