论文部分内容阅读
采用等离子体化学气相沉积(PECVD)方法制备了硼掺杂微晶硅薄膜和微晶硅薄膜太阳电池.研究了乙硼烷含量、p型膜厚度及沉积温度对硼掺杂薄膜生长特性和高沉积速率的电池性能的影响.通过对p型微晶硅薄膜沉积参数的优化,在本征层沉积速率为0.78nm/s的高沉积速率下,制备了效率为5.5%的单结微晶硅薄膜太阳电池.另外,对p型微晶硅薄膜的载流子疏输运机理进行了讨论.
Boron doped microcrystalline silicon thin film and microcrystalline silicon thin film solar cells were prepared by plasma chemical vapor deposition (PECVD) method. The effects of diborane content, p type film thickness and deposition temperature on the growth characteristics and high Deposition rate of the cell performance.By optimizing the deposition parameters of the p-type microcrystalline silicon thin film, single-junction microcrystalline silicon with an efficiency of 5.5% was prepared at high deposition rate of 0.78nm / s Thin film solar cells.In addition, carrier transport mechanism of p-type microcrystalline silicon thin film is discussed.