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为了实现氧化物薄膜晶体管(TFT)的低电阻布线,采用Cu作为氧化物TFT的源漏电极。通过优化成膜工艺制备了电阻率低至2.0μΩ·cm的Cu膜,分析了Cu膜的晶体结构、粘附性及其与a-IZO薄膜的界面,制备了以a-IZO为有源层和Cu膜的粘附层的TFT器件。结果表明:所制备的Cu膜呈多晶结构;引入a-IZO粘附层增强了Cu膜与衬底的粘附性;同时,Cu在a-IZO中的扩散得到了抑制。所制备的TFT的迁移率、亚阈值摆幅和阈值电压分别为12.9 cm2/(V·s)、0.28 V/dec和-0.6 V。
In order to realize a low-resistance wiring of an oxide thin film transistor (TFT), Cu is used as a source-drain electrode of an oxide TFT. A Cu film with a resistivity as low as 2.0 μΩ · cm was prepared by optimizing the film formation process. The crystal structure, adhesion and the interface with the a-IZO film were analyzed. And a Cu film adhesion layer. The results show that the prepared Cu film has a polycrystalline structure. The introduction of a-IZO adhesion layer enhances the adhesion of the Cu film to the substrate. At the same time, the Cu diffusion in a-IZO is inhibited. The mobility, subthreshold swing and threshold voltage of the prepared TFT were 12.9 cm2 / (V · s), 0.28 V / dec and -0.6 V, respectively.