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在ZnO单晶样品中注入了能量为20—100keV、总剂量为4.4×1015cm-2的He离子.利用基于慢正电子束的多普勒展宽测量研究了离子注入产生的缺陷.结果表明,He离子注入ZnO产生了双空位或更大的空位团.在400℃以下退火后,He开始填充到这些空位团里面,造成空位团的有效体积减少.经过400℃以上升温退火后,这些空位团的尺寸开始增大,但由于有少量的He仍然占据在空位团内,因此直到800℃这些空位团仍保持稳定.高于800℃退火后,由于He的脱附,留下的空位团很快回复,在1000℃下得到完全消除.
The ZnO single crystal samples were implanted with He ions with the energy of 20-100 keV and the total dose of 4.4 × 10 15 cm -2.The defect caused by ion implantation was studied by using the slow positive electron beam Doppler broadening measurement.The results showed that He Ion implantation of ZnO produced double vacancies or larger vacancies.After annealing below 400 ℃, He began to fill these vacancies inside, resulting in the effective volume of vacancies reduced.After 400 ℃ above the annealing temperature, the vacant cluster The size starts to increase, but because a small amount of He still occupies within the vacancy groups, the vacancy groups remain stable up to 800 ° C. After annealing above 800 ° C., the vacancy groups left are quickly recovered due to the desorption of He , Completely eliminated at 1000 ° C.