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目的探讨注意缺陷多动障碍(ADHD)患儿的错误相关负电位(ERN)的变化特点。方法应用事件相关脑电位仪,对30例ADHD患儿和30名健康儿童做ERN检测并比较。结果与健康儿童相比,ADHD患儿的正确反应率明显降低、正确反应和错误反应的反应时明显延长;ERN潜伏期(Cz、Fz、C3和C4)明显延迟、波幅(Cz、C3、Fz和Pz)降低。结论 ADHD患儿的ERN潜伏期和波幅异常,可能反映了患者内在错误监控机制存在缺陷。
Objective To investigate the characteristics of error related negative potential (ERN) in children with attention deficit hyperactivity disorder (ADHD). Methods Event-related brain potentiometer was used to detect and compare ERN in 30 children with ADHD and 30 healthy children. Results Compared with healthy children, the correct response rate was significantly decreased in children with ADHD, and the reaction time of correct response and false response was significantly prolonged. The latent period of ERN (Cz, Fz, C3 and C4) was significantly delayed, and the amplitude (Cz, C3, Fz and Pz) decreases. Conclusion The abnormal ERN latency and amplitude in children with ADHD may reflect the defects of the intrinsic error monitoring mechanism in patients.