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在有效质量近似下,采用三角势近似异质结界面处导带弯曲,并计及流体静压力效应,利用变分原理研究了有限高势垒GaN/AlxCa1-xN球形量子点杂质态一阶线性和三阶非线性光吸收系数随着电子面密度及流体静压力的变化关系.数值计算结果指出,随电子面密度的增加,吸收系数峰值的位置向短波方向移动(即蓝移),且一阶线性吸收峰随之增高,三阶非线性吸收峰随之降低;随压力的增加,吸收系数峰值的位置先向长波方向移动(红移),然后向短波方向移动(蓝移),且一阶线性吸收峰随之降低,三阶非线性吸收峰随之升高.结果表明,压力效应是明显的,导带弯曲效应是不可忽略的.
At effective mass approximation, the bending of the conduction band at the interface of the triangular potential approximation and the hydrostatic pressure effect are taken into account. The variational principle is used to study the first-order linearity of the impurity states of the GaN / AlxCa1-xN quantum dots And third-order nonlinear optical absorption coefficient with electron density and hydrostatic pressure.The numerical results show that with the increase of electron density, the peak of the absorption coefficient shifts to the shortwave direction With the increase of pressure, the peak of the absorption coefficient moves to the longwave direction first (redshift) and then to the shortwave direction (blue shift), and the first-order nonlinear absorption peak decreases with the increase of pressure The linear absorption peak decreases with the increase of the third-order nonlinear absorption peak. The results show that the pressure effect is obvious and the bending effect of the conduction band can not be neglected.