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本文系统研究了在355～455℃的温度范围内于密闭安瓶中用元素Zn和Sb在n型InSb中进行Zn扩散。当N_(Sb)/N_(Zn)≤0.5或N_(Sb)/N_(Zn)≥5时,如果Zn源足够,则扩散深度不变,与装入安瓿的Zn或和Sb源的总量无关。在N_(Sb)/N_(Zn)≥5时,可重复获得高度平坦的扩散平面和高质量P型层。在N_(Sb)/N_(Zn)≤0.5时,所观察到的扩散面很粗糙,并有很多损伤。用上述所得结果制备了8个元的3～5μm InSb光伏探测器阵列。
This paper systematically studied the Zn diffusion in the n-type InSb with the elements Zn and Sb in a sealed ampoule in the temperature range of 355 ~ 455 ℃. If the Zn source is sufficient when N Sb / N Zn ≤ 0.5 or N Sb / Zn ≥ 5, the diffusion depth does not change with the total amount of Zn or Sb contained in the ampoule Nothing to do When N_ (Sb) / N_ (Zn) ≥5, a highly flat diffusion plane and a high quality P-type layer can be obtained repeatedly. In the case of N Sb / N Zn ≤ 0.5, the observed diffusion surface is rough and has many damages. Using the results obtained above, a 8-element 3 to 5 μm InSb photovoltaic detector array was prepared.