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An Al–Ti–Cu–Si solid–liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500–600°C was designed for SiC –metal joining.The microstructure,phases,differential thermal curves,and high-temperature wetting behavior of the alloy were analyzed using scanning electron microscopy,X-ray diffraction analysis,differential scanning calorimetry,and the sessile drop method.The experimental results show that the 76.5Al–8.5Ti–5Cu–10Si alloy is mainly composed of Al–Al_2Cu and Al–Si hypoeutectic low-melting-point microstructures(493–586°C) and the high-melting-point intermetallic compound AlTiSi(840°C).The contact angle,determined by high-temperature wetting experiments,is approximately 54°.Furthermore,the wetting interface is smooth and contains no obvious defects.Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic,respectively.The formation of the brittle Al_4C_3 phase at the interface is suppressed by the addition of 10wt% Si to the alloy.
An Al-Ti-Cu-Si solid-liquid dual-phase alloy that exhibits good wettability and appropriate interfacial reaction with SiC at 500-600 ° C was designed for SiC -metal joining. The microstructure, phases, differential thermal curves, and high -temperature wetting behavior of the alloy were analyzed using scanning electron microscopy, X-ray diffraction analysis, differential scanning calorimetry, and the sessile drop method. The experimental results show that the 76.5Al-8.5Ti-5Cu-10Si alloy is mainly composed of The contact angle, determined by high-melting-point intermetallic compound AlTiSi (840 ° C). Al-Si-Al 2 Cu and Al-Si hypoeutectic low-melting-point microstructures (493-586 ° C) approximately 54 ° .Furthermore, the wetting interface is smooth and contains no significant defects. Metallurgical bonding at the interface is attributable to the reaction between Al and Si in the alloy and ceramic, respectively. The formation of the brittle Al_4C _3 phase at the interface is suppressed by the addition of 10wt% Si to the alloy.