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The InGaAs/InAlAs/InP high electron mobility transistor(HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy.Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature,doping time and growth process.It is found that the optimal Si δ-doping concentration(N_d) is about 5.0×10~(12)cm~(-2) and the use of growth interruption has a dramatic effect on the improvement of electrical properties.The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy.An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated.The device presents good pinch-off characteristics and the kink-effect of the device is trifling.In addition,the device exhibits f_T=249 GHz and f_(max)>400 GHz.
The InGaAs / InAlAs / InP high electron mobility transistors (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si delta-doping condition and growth interruption on the electrical properties are investigated by changing the Si It is found that the optimal Si δ-doping concentration (N_d) is about 5.0 × 10 ~ (12) cm ~ (-2) and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An In InAs / InAlAs / InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch- off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits f_T = 249 GHz and f_ (max)> 400 GHz.