Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High

来源 :Chinese Physics Letters | 被引量 : 0次 | 上传用户:cjl11082009
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
The InGaAs/InAlAs/InP high electron mobility transistor(HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy.Effects of Si δ-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature,doping time and growth process.It is found that the optimal Si δ-doping concentration(N_d) is about 5.0×10~(12)cm~(-2) and the use of growth interruption has a dramatic effect on the improvement of electrical properties.The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy.An InGaAs/InAlAs/InP HEMT device with a gate length of 100 nm is fabricated.The device presents good pinch-off characteristics and the kink-effect of the device is trifling.In addition,the device exhibits f_T=249 GHz and f_(max)>400 GHz. The InGaAs / InAlAs / InP high electron mobility transistors (HEMT) structures with lattice-matched and pseudomorphic channels are grown by gas source molecular beam epitaxy. Effects of Si delta-doping condition and growth interruption on the electrical properties are investigated by changing the Si It is found that the optimal Si δ-doping concentration (N_d) is about 5.0 × 10 ~ (12) cm ~ (-2) and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission electron microscopy. An In InAs / InAlAs / InP HEMT device with a gate length of 100 nm is fabricated. The device presents good pinch- off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits f_T = 249 GHz and f_ (max)> 400 GHz.
其他文献
InAs_(1-x)Sb_x with different compositions is grown by molecular beam epitaxy on(lOO)-oriented semi-insulating GaAs substrates.The increase of Sb content in the
We report, for the first time to our knowledge, an on-chip mode-locked laser diode(OCMLLD) that employs multimode interference reflectors to eliminate the need
We numerically investigate a coupled-resonator structure consisting of a stub resonator and a nanodisk resonator using a two-dimensional finite element method.S
全国科技人员永远不会忘记邓小平同志对科技事业的关怀和支持。中国科学院半导体研究所的广大职工也将永远不会忘怀他老人家对我们的关怀和支持。那是十年内乱尚未结束的年代
The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs) is studied.The effects of electrode thi
We investigate the influence of interface charge on electrical performance of NbAlO/AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors(MOSHEM
为解决工程造林成活率低的问题,我区从2001年开始容器育苗造林,随着天保工程的实施,容器育苗造林已成为全区匹配工程造林主要方式之一,年均推广200万袋,不仅有效解决了工程造
A modified double-split ring resonator and a modified triple-split ring resonator,which offer polarization-insensitive performance,are investigated,designed and
A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nanolithography,inductively coupled plasma etching,th
Quantum illumination,that is,quantum target detection,is to detect the potential target with two-mode quantum entangled state.For a given transmitted energy,the