采用质量分离的低能双离子束淀积（ＩＢＤ）技术，在硅（１１１）衬底上共淀积，生长了氧化铈外延薄膜．椭圆偏振仪测得，膜厚２０００Ａ．俄歇能谱仪测得，外延层内铈、氧分布均匀，具有很好的正化学比．Ｘ射线双晶衍射得到明显的氧化铈（１１１），（２２２）峰，半高宽≤２３″。 A cOn epitaxial thin film was grown by co-deposition on a Si (111) substrate by mass separation of low energy double ion beam deposition (IBD). Ellipsometer measured thickness 2000A. Auger spectrometer measured, epitaxial layer of cerium, oxygen distribution, with good positive chemical ratio. X-ray double crystal diffraction results in obvious peaks of cerium (111) and (222) with FWHM less than or equal to23 ".