论文部分内容阅读
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 .在氧化铝模板的背面喷金作为催化剂 ,合成了 Ge纳米线 .采用原子力显微镜、X射线衍射、透射电镜、能量散射谱等手段对 Ge纳米线进行了分析 .Ge纳米线的直径约为 30 nm,长度超过 6 0 0 nm.对 Ge纳米线的生长机理进行了探讨 .
Ge nanowires were prepared by alumina template method combined with low pressure chemical vapor deposition with high vacuum background. Ge nanowires were synthesized by spraying gold on the back of the alumina template as a catalyst. The morphology of Ge nanowires was characterized by atomic force microscopy, X-ray diffraction, transmission electron microscopy, Ge nanowires were analyzed by energy dispersive spectroscopy, etc. The diameter of Ge nanowires was about 30 nm and the length was over 600 nm.The growth mechanism of Ge nanowires was discussed.