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以液态金属Ga作为催化剂合成了大量的非晶SiO_2纳米线阵列。这些纳米线具有高度取向性,直径分布均匀,平均约8 nm,长度大于300μm。研究发现,载气的湿度对非晶SiO_2纳米线阵列的生长有重大影响,提出了一种可能的生长模型,以解释这一与传统的VLS机制不同的生长过程。对样品的光致荧光(PL)谱的测量表明,非晶SiO_2纳米线阵列在蓝光波段附近存在两个很强且稳定的发射峰,它们直接与样品中的缺陷和空位有关。首次发现了一个稳定的PL峰,存在于红外波段,作为光源,非晶SiO_2纳米线阵列可能会在纳米光电子器件中得到应用。由于SiO_2是传统的光纤材料,单根SiO_2纳米线也有希望应用于近场光学扫描显微镜(SNOM)之中。
A large number of amorphous SiO_2 nanowire arrays were synthesized with liquid metal Ga as catalyst. These nanowires have a high degree of orientation and a uniform diameter distribution with an average of about 8 nm and a length of more than 300 μm. It is found that the humidity of carrier gas has a significant influence on the growth of amorphous SiO_2 nanowire arrays, and a possible growth model is proposed to explain this different growth process from the traditional VLS mechanism. Measurement of the PL spectra of the samples shows that there are two strong and stable emission peaks near the blue band in the amorphous SiO_2 nanowire arrays, which are directly related to the defects and vacancies in the sample. For the first time, a stable PL peak was found in the infrared region. As a light source, amorphous SiO_2 nanowire arrays may be used in nanoscale optoelectronic devices. Since SiO 2 is a traditional optical fiber material, a single SiO 2 nanowire is also expected to be used in near field optical scanning microscopy (SNOM).