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本文介绍一种有别于GaAs MESFET又相似于HEMT结构的器件。采用MBE技术生长i-GaAs/i-GaAlAs/i-GaAs结构,用溅射技术淀积WSi_x,用自对准离子注入形成源-漏区来制备MISHFET。这是一种具有二维电子气的异质结场效应器件。栅电极尺寸为4μm×40μm,测量到的开启电压为+1.4V,跨导为20—25mS/mm,还给出了低温测量结果。
This article describes a different from the GaAs MESFET and HEMT structure similar to the device. The MISHFET was prepared by MBE growth of i-GaAs / i-GaAlAs / i-GaAs structure, deposition of WSi_x by sputtering and source-drain region by self-aligned ion implantation. This is a heterojunction field effect device with two-dimensional electron gas. The gate electrode size is 4 μm × 40 μm, the measured turn-on voltage is + 1.4V, and the transconductance is 20-25 mS / mm. The result of the low temperature measurement is also given.