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高速雪崩光电二极管和高灵敏度接收机是未来的Gb/s级光通信系统的重要组成部分。本文论述了高速Ⅲ-Ⅴ族雪崩光电二极管的理论和实验特性,以及用场效应晶体管(FET)和双极晶体管放大器组成的Gb/s级光接收机。特别讨论了APD增益带宽积以及对高速接收机灵敏度的影响。对目前比特率高达8Gb/s的接收机灵敏度测量值和理论计算结果进行了比较。
High-speed avalanche photodiodes and high-sensitivity receivers are an important part of the future Gb / s optical communications system. This article discusses the theoretical and experimental characteristics of high-speed group III-V avalanche photodiodes and Gb / s class optical receivers that use field-effect transistors (FETs) and bipolar transistor amplifiers. In particular, the APD gain-bandwidth product and the effect on high-speed receiver sensitivity are discussed. Receiver sensitivity measurements up to 8Gb / s for the current bit rate are compared with theoretical calculations.