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研究了最大栅电流应力 (即 p MOSFET最坏退化情况 )下 p MOSFET栅电流的退化特性 .实验发现 ,在最大栅电流应力下 ,p MOSFET栅电流随应力时间会发生很大下降 ,而且在应力初期和应力末期栅电流的下降规律均会偏离公认的指数规律 .给出了所有这些现象的详细物理解释 ,并在此基础上提出了一种新的用于 p MOSFET寿命评估的栅电流退化模型
The degradation of p-MOSFET gate current under maximum gate current stress (ie worst case p-MOSFET degradation) was investigated. It was found that at maximum gate current stress, the p MOSFET gate current greatly decreases with the stress time, Both the initial and final stress drop of gate current deviate from the well-known exponential law, and a detailed physical explanation of all these phenomena is given. Based on this, a new gate current degradation model