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用高温高压苯热合成方法制备了GaP纳米晶,用X射线衍射、光吸收谱及透射电子显微镜对所得样品进行了分析测试.结果表明,GaP纳米晶在苯热条件下是亚稳定态的,反应时间过长及反应温度过高均不利于它的生成和生长.文中还讨论了晶粒度分布与合成条件间的关系,并进行了理论上的定性分析.
GaP nanocrystals were prepared by high-temperature high-pressure benzene thermal synthesis. The samples were analyzed by X-ray diffraction, optical absorption and transmission electron microscopy. The results show that GaP nanocrystals are metastable under the condition of benzene heat, and the reaction time is too long and the reaction temperature is too high are not conducive to its formation and growth. The paper also discusses the relationship between the grain size distribution and the synthesis conditions, and carries out a theoretical qualitative analysis.