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利用直流脉冲磁控溅射方法在室温下通过改变O2流量制备具有不同晶体结构的N掺杂TiO2薄膜,利用台阶仪、X射线光电子能谱仪、X射线衍射仪、紫外-可见分光光度计等设备对薄膜沉积速率、化学成分、晶体结构、禁带宽度等进行分析.结果表明:所制备的薄膜元素配比约为TiO1.68±0.06N0.11±0.01,N为替位掺杂,所有样品退火前后均未形成Ti—N相结构,N掺杂TiO2薄膜的沉积速率、晶体结构等主要依赖于O2流量.在O2流量为2sccm时,N掺杂TiO2薄膜沉积速率相对较高,薄膜为非晶态结构,但薄膜内含有锐钛矿(anatase)和金红石(rutile)相晶核,退火后薄膜呈anatase和rutile相混合结构,禁带宽度仅为2.86eV.随着O2流量的增加,薄膜沉积速率单调下降,退火后样品禁带宽度逐渐增加.当O2流量为12sccm时,薄膜为anatase相择优生长,退火后呈anatase相结构,禁带宽度为3.2eV.综合本实验的分析结果,要在室温条件下制备晶态N掺杂TiO2薄膜,需在高O2流量(>10sccn)条件下制备.
N-doped TiO2 thin films with different crystal structures were prepared by DC pulsed magnetron sputtering at room temperature by changing the O2 flow rate. Using a step-meter, X-ray photoelectron spectroscopy, X-ray diffraction, UV-visible spectrophotometer The deposition rate, chemical composition, crystal structure, forbidden band width and so on were analyzed by the equipment.The results show that the prepared thin film elements ratio is about TiO1.68 ± 0.06N0.11 ± 0.01, N is the alternative doping, all The Ti-N phase structure was not formed before and after the sample annealed.The deposition rate and crystal structure of N-doped TiO2 film mainly depend on the O2 flow rate.When the flow rate of O2 is 2sccm, the deposition rate of N-doped TiO2 film is relatively high, Amorphous structure, but the film contains anatase and rutile phase nuclei, and the annealed film has an anatase and rutile phase structure with a forbidden band width of only 2.86eV.With the increase of O2 flow rate, The film deposition rate decreases monotonously and the forbidden band width of annealed samples increases gradually.When the flow rate of O2 is 12sccm, the film grows by anatase, the structure of anatase is annealed, the forbidden band width is 3.2eV.According to the analysis results of this experiment, To be at room temperature Preparing crystalline N-doped TiO2 film, to be prepared at a high flow rate of O2 (> 10sccn) conditions.